Discretes IGBTs designed for 650V solar inverters

Discretes IGBTs designed for 650V solar inverters

2013/07/15

Microsemi has introduced a range of  of 650Vnon-punch through (NPT) insulated bipolar gate transistors (IGBTs), offered in 45A, 70A and 95A current ratings.

Designed for operation in harsh environments and for industrial products such as solar inverters and switch mode power supplies, the NPT IGBTs support switching speeds of up to 150kHz.

These can be further improved when the transistors are paired with silicon carbide (SiC) free-wheeling diodes, said Microsemi.

The devices are fabbed on a  Power MOS 8 process technology and implement  wafer thinning process, which reduces total switching losses.

www.microsemi.com

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